VTFET with cell height constraints

ABSTRACT

Semiconductor devices include a channel fin having a top surface. A top semiconductor structure, in contact with the entire top surface of the channel fin and having a top portion and a bottom portion, with the top portion of the top semiconductor structure being narrower than the bottom portion. A restraint structure being formed over the bottom portion of the semiconductor structure.

BACKGROUND

The present invention generally relates to semiconductor devicefabrication and, more particularly, to the fabrication of verticaltransport field effect transistors (VTFETs) with tight cell heightconstraints that have top low source/drain junction resistance.

VTFETs provide good scaling in chip area by establishing a verticalorientation, with the source and drain regions being positionedvertically around the channel. However, as devices continue to scalesmaller in size, constraints are imposed due to the risk of nearbystructures, such as the gate and bottom source/drain contacts, shortingto the top source/drain. Shrinking the top source/drain relative to thewidth of the channel fin results in substantially increased junctionresistance, degrading device performance.

SUMMARY

A method of forming a semiconductor device includes forming a restraintstructure over a channel fin, having an opening that is smaller than atop surface of the channel fin. A top semiconductor structure is grownfrom the top surface of the channel fin, with lateral growth of thesemiconductor structure being limited by the restraint structure.

A method of forming a semiconductor device includes forming a channelfin on a bottom source/drain structure. A gate stack is formed onsidewalls of the channel fin. A sacrificial layer is formed on a topsurface of a channel fin. A restraint structure is formed on thesacrificial layer, the restraint structure having an opening that issmaller than the top surface of the channel fin. The sacrificial layeris etched away to expose the top surface of the channel fin. A topsource/drain structure is grown from the top surface of the channel fin,with lateral growth of the semiconductor structure being limited by therestraint structure.

A semiconductor device includes a channel fin having a top surface. Atop semiconductor structure is formed in contact with the entire topsurface of the channel fin and has a top portion and a bottom portion.The top portion of the top semiconductor structure is narrower than thebottom portion. A restraint structure is formed over the bottom portionof the semiconductor structure.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description will provide details of preferred embodimentswith reference to the following figures wherein:

FIG. 1 is a cross-sectional view of a step in the formation of avertical transport field effect transistor (VTFET) that shows a channelfin being formed over a bottom source/drain structure, in accordancewith an embodiment of the present invention;

FIG. 2 is a cross-sectional view of a step in the formation of a VTFETthat shows the formation of a sacrificial layer and a cap layer beingformed over the channel fin, in accordance with an embodiment of thepresent invention;

FIG. 3 is a cross-sectional view of a step in the formation of a VTFETthat shows the patterning of a hole in the cap layer to expose thesacrificial layer, in accordance with an embodiment of the presentinvention;

FIG. 4 is a cross-sectional view of a step in the formation of a VTFETthat shows the removal of the sacrificial layer to expose the topsurface of the channel fin, in accordance with an embodiment of thepresent invention;

FIG. 5 is a cross-sectional view of a step in the formation of a VTFETthat shows the formation of a top source/drain structure on the exposedtop surface of the channel fin, in accordance with an embodiment of thepresent invention;

FIG. 6 is a cross-sectional view of a step in the formation of a VTFETthat shows the formation electrical contacts to the bottom source/drainstructure, a gate stack, and the top source/drain structure, through aninterlayer dielectric, in accordance with an embodiment of the presentinvention; and

FIG. 7 is a block/flow diagram of a method of forming a VTFET that has atop source/drain structure with a narrowed top portion to meet cellheight constraints, in accordance with an embodiment of the presentinvention.

DETAILED DESCRIPTION

Embodiments of the present invention provide vertical transport fieldeffect transistors (VTFETs) that include epitaxially grown topsource/drain contacts that are laterally constrained at their topsurfaces, resulting in a structure that is narrower at the top than atthe bottom. This preserves the contact area between the top source/drainstructure and the channel fin, while still meeting cell heightconstraints.

As used herein, the term “cell height constraint” refers to a designlayout constraint that limits how closely one structure can bepositioned relative to neighboring structures. The cell heightconstraint thereby prevents conductive structures from shorting to oneanother as a result of normal fabrication process variations. Somestructures, such as anisotropically etched contact vias, tend to taperas they travel through a layer, with a wider diameter at their topsurface than at their bottom surface. By forming a VTFET with a topsource/drain that has a smaller dimension at its top surface than at itsbottom surface, a complementary shape can be formed that maximizescontact area without risking damage.

Referring now to FIG. 1 , a cross-sectional view of a step in thefabrication of a VTFET is shown. This step is shown in the middle of alarger process, with a number of the elements of the VTFET already inplace. It should be understood that the processes described herein areprovided for the purpose of illustration and should not be construed aslimiting. Similarly, the structures described herein are intended to putthe embodiments of the present invention in an understandable contextand should not be construed as limiting.

A fin 103 can be formed from a semiconductor substrate 102. Thesemiconductor substrate 102 may be a bulk-semiconductor substrate. Inone example, the bulk-semiconductor substrate may be asilicon-containing material. Illustrative examples of silicon-containingmaterials suitable for the bulk-semiconductor substrate include, but arenot limited to, silicon, silicon germanium, silicon germanium carbide,silicon carbide, polysilicon, epitaxial silicon, amorphous silicon, andmulti-layers thereof. Although silicon is the predominantly usedsemiconductor material in wafer fabrication, alternative semiconductormaterials can be employed, such as, but not limited to, germanium,gallium arsenide, gallium nitride, cadmium telluride, and zinc selenide.Although not depicted in the present figures, the semiconductorsubstrate 102 may also be a semiconductor on insulator (SOI) substrate.

A platform 103 can be formed from the semiconductor substrate 102 by anyappropriate anisotropic etching technique. For example, reactive ionetching (RIE) is a form of plasma etching in which during etching thesurface to be etched is placed on a radio-frequency powered electrode.Moreover, during RIE the surface to be etched takes on a potential thataccelerates the etching species extracted from plasma toward thesurface, in which the chemical etching reaction is taking place in thedirection normal to the surface. Other examples of anisotropic etchingthat can be used at this point of the present invention include ion beametching, plasma etching or laser ablation. Alternatively, the platform103 can be formed by spacer imaging transfer.

A bottom source/drain structure 104 is formed on top of the platform103. In some embodiments, the bottom source/drain structure can beepitaxially grown from the top surface of the platform 103. The bottomsource/drain structure 104 is formed from a doped semiconductormaterial, for example including n-type dopants or p-type dopants, andcan be doped in situ during the epitaxial growth or through ionimplantation.

A first interlayer dielectric 106 is formed around the platform 103 andthe bottom source/drain structure 104. The first interlayer dielectric106 can be formed by any appropriate dielectric material withappropriate etch selectivity, such as silicon dioxide. The dielectricmaterial can be deposited by any appropriate deposition process, suchas, e.g., chemical vapor deposition (CVD), physical vapor deposition(PVD), atomic layer deposition (ALD), or gas cluster ion beam (GCIB)deposition. In some embodiments, the dielectric material can bedeposited by a flowable CVD process. After deposition, excess materialcan be removed using chemical mechanical planarization (CMP).

CVD is a deposition process in which a deposited species is formed as aresult of chemical reaction between gaseous reactants at greater thanroom temperature (e.g., from about 25° C. about 900° C.). The solidproduct of the reaction is deposited on the surface on which a film,coating, or layer of the solid product is to be formed. Variations ofCVD processes include, but are not limited to, Atmospheric Pressure CVD(APCVD), Low Pressure CVD (LPCVD), Plasma Enhanced CVD (PECVD), andMetal-Organic CVD (MOCVD) and combinations thereof may also be employed.In alternative embodiments that use PVD, a sputtering apparatus mayinclude direct-current diode systems, radio frequency sputtering,magnetron sputtering, or ionized metal plasma sputtering. In alternativeembodiments that use ALD, chemical precursors react with the surface ofa material one at a time to deposit a thin film on the surface. Inalternative embodiments that use GCIB deposition, a high-pressure gas isallowed to expand in a vacuum, subsequently condensing into clusters.The clusters can be ionized and directed onto a surface, providing ahighly anisotropic deposition.

CMP is performed using, e.g., a chemical or granular slurry andmechanical force to gradually remove upper layers of the device. Theslurry may be formulated to be unable to dissolve, for example, thesource/drain material, resulting in the CMP process's inability toproceed any farther than that layer.

A fin 116 is also formed on the platform 103. The fin 116 can be formedby etching down into the same semiconductor layer that forms theplatform 103, with the bottom source/drain structure 104 being grown orimplanted around the fin 116. Thus, in some embodiments, the fin 116penetrates through the bottom source/drain structure 104. The fin 116 isformed from an appropriate channel material, such as silicon.

A bottom spacer 108 is formed around the fin 116, on the firstinterlayer dielectric 106 and the bottom source/drain structure 104. Itis specifically contemplated that the bottom spacer can be formed fromsilicon nitride, silicon carbide, or silicon oxycarbide, but it shouldbe understood that any appropriate dielectric material can be usedinstead.

A gate dielectric layer 109 is formed on sidewalls of the channel fin106 by any appropriate conformal process. It is specificallycontemplated that the gate dielectric layer 109 can be formed from ahigh-k dielectric material, but it should be understood that anyappropriate dielectric material can be used instead. As used herein, theterm “high-k” refers to materials that have a dielectric constant k thatis greater than that of silicon dioxide. Examples of high-k dielectricmaterials include, but are not limited to, metal oxides such as hafniumoxide, hafnium silicon oxide, hafnium silicon oxynitride, lanthanumoxide, lanthanum aluminum oxide, zirconium oxide, zirconium siliconoxide, zirconium silicon oxynitride, tantalum oxide, titanium oxide,barium strontium titanium oxide, barium titanium oxide, strontiumtitanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalumoxide, and lead zinc niobate. The high-k material may further includedopants such as lanthanum and aluminum. An interfacial layer may existbetween the gate dielectric and channel material, to passivate theinterface between the channel material and the gate dielectric, forimproving carrier transport.

A gate conductor layer 112 is formed over the gate dielectric layer 109.The gate conductor layer 112 can be formed by any appropriate conformaldeposition process and can be formed from any appropriate conductivemetal such as, e.g., tungsten, nickel, titanium, molybdenum, tantalum,copper, platinum, silver, gold, ruthenium, iridium, rhenium, rhodium,and alloys thereof. The gate conductor layer 112 may alternatively beformed from a doped semiconductor material such as, e.g., dopedpolysilicon. In some embodiments, the gate conductor layer 112 can beformed with a work function metal, or can include multiple conductorlayers, with a work function metal layer in contact with the channel fin116.

As shown in FIG. 1 , the gate conductor layer 112 can be formed aroundthe fin 116, to provide a large contact area. Notably, the gateconductor layer 112 extends laterally on one side of the fin 116, andnot on the other. This provides a surface for a gate contact on oneside, without interfering with the bottom source/drain contact.

A dielectric cap layer 110 is formed on and around the gate conductorlayer 112 to electrically isolate the gate conductor layer 112 fromneighboring structures. The dielectric cap layer 110 can be formed fromany appropriate dielectric material such as, e.g., silicon nitride, andby any appropriate conformal deposition process.

A second interlayer dielectric 114 is formed over and around the fin 116and the dielectric cap layer 110. The second interlayer dielectric 114can be formed by any appropriate process, such as a flowable CVDprocess, and can be formed from any appropriate dielectric material,such as silicon dioxide. CMP can be used to bring the top surface of thesecond interlayer dielectric 114 to a first fin height.

In some embodiments, the fin 116 can then be etched down, below theheight of the second interlayer dielectric, using any appropriatelyselective isotropic or anisotropic etch. Similarly, the dielectric caplayer 110, the gate contact layer 112, and the gate dielectric layer 109can be etched down, below a new top surface of the fin 116. This leavesa gap between the fin 116 and the second interlayer dielectric 114. Thegap can then be filled by conformal deposition of a spacer material,such as silicon nitride. The spacer material is anisotropically etchedto remove it from horizontal surfaces, forming top spacers 118. Theresulting structure includes an exposed top surface of the fin 116.

Referring now to FIG. 2 , a cross-sectional view of a step in thefabrication of a VTFET is shown. A sacrificial semiconductor layer 202is formed on top of the channel fin 116. In some embodiments, thesacrificial semiconductor layer 202 can be formed by an epitaxial growthprocess and can be formed from silicon germanium, but it should beunderstood that any appropriate semiconductor, having etch selectivityand a compatible crystal structure with the material of the underlyingfin, can be used instead to form the sacrificial semiconductor layer202. The sacrificial semiconductor layer 202 covers the entire activesurface of the channel fin 116 and protects the top spacers 118 fromsubsequent patterning steps. As used herein, the term “selective,” inreference to a material removal process, denotes that the rate ofmaterial removal for a first material is greater than the rate ofremoval for at least another material of the structure to which thematerial removal process is being applied.

A cap layer 204 is formed over the sacrificial semiconductor layer 202.The cap layer 204 can be formed using any appropriate deposition processand can be formed from any appropriate dielectric material. Afterdeposition of the dielectric material, a CMP can be performed that stopson the second interlayer dielectric 114 or the top spacers 118. In someembodiments, the cap layer 204 can be formed from silicon nitride,silicon carbide, or silicon oxycarbide.

Referring now to FIG. 3 , a cross-sectional view of a step in thefabrication of a VTFET is shown. A mask 302 is formed over the topsurface of the cap layer 204 by any appropriate deposition process, suchas CVD, ALD, PVD, or GCIB deposition. The mask 302 can be formed from,for example, an organic planarizing layer (OPL), and etched using anyappropriate photolithographic process. The mask 302 exposes a portion ofthe underlying cap layer 204, which is then anisotropically etched awayto expose the underlying sacrificial semiconductor layer 202. A toprestraint structure 304 remains at the sides.

Referring now to FIG. 4 , a cross-sectional view of a step in thefabrication of a VTFET is shown. A selective isotropic etch is used toremove the sacrificial layer, without damaging the top restraintstructure 304, the top spacers 118, and the fin 116. A space 402 iscreated, which extends over the entirety of the top surface of thechannel fin 116 and that has an opening at the top that is narrower thanthe top surface of the channel fin 116.

Referring now to FIG. 5 , a cross-sectional view of a step in thefabrication of a VTFET is shown. The OPL 302 can be removed and a topsource/drain structure 502 is grown in the space 402, from the topsurface of the fin 116. The growth of the top source/drain structure 502is laterally constrained by the top spacers 118 and the restraintstructure 304. As a result, the top source/drain structure 502 has abottom surface that covers the top surface of the fin 116 and has a topsurface that is narrower than the bottom surface.

Referring now to FIG. 6 , a cross-sectional view of a step in thefabrication of a VTFET is shown. A third interlayer dielectric 602 isformed over the second interlayer dielectric 114 and the topsource/drain structure 502. Vias are formed through the third interlayerdielectric and the second interlayer dielectric to reach respectivecontact point, and conductive material is deposited in the vias. Thisforms the bottom source/drain contact 604, which penetrates the gatestack and the bottom spacer 108 to reach the bottom source/drainstructure 104, the gate contact 606, which penetrates the dielectric caplayer 110 to contact the gate conductor layer 112 of the gate stack, andthe top source/drain contact 608, which penetrates the third interlayerdielectric 602 to contact the top source/drain structure 502.

As is shown in FIG. 6 , a portion of the contacts 604 and 606 passthrough space that was occupied by the restraint structures 304. If therestraint structures 304 were not present, then the growth of the topsource/drain structure 502 could have filled that space. The resultwould have been an electrical short-circuit between the top source/drainstructure 502 and the bottom source/drain contact 604 and/or the gatecontact 606. By constraining the lateral growth of the top source/drainstructure 502, the restraint structures 304 help improve device yieldand help meet cell height constraints in the design layout.

It is to be understood that aspects of the present invention will bedescribed in terms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps can be varied within the scope of aspects of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x) where x is less than or equal to 1, etc. Inaddition, other elements can be included in the compound and stillfunction in accordance with the present principles. The compounds withadditional elements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment”,as well as other variations thereof, means that a particular feature,structure, characteristic, and so forth described in connection with theembodiment is included in at least one embodiment. Thus, the appearancesof the phrase “in one embodiment” or “in an embodiment”, as well anyother variations, appearing in various places throughout thespecification are not necessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below.” “lower,” “above,”“upper,” and the like, can be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the FIGS. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example, if the device in theFIGS. is turned. over, elements described as “below”or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device can be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein can be interpreted accordingly. In addition, itwill also be understood that hen a layer is referred to as being“between” two layers, it can be the only layer between the two layers,or one or more intervening layers can also be present.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Referring now to FIG. 7 , a method of forming a VTFET with cell heightconstraints is shown. Block 702 forms a semiconductor fin on a bottomsource/drain structure 104. It is specifically contemplated that thesemiconductor fin can be formed by epitaxial growth, but it should beunderstood that any appropriate deposition process can be used. Block704 forms the bottom spacers 108 on the lower source/drain region 104.In some embodiments, the bottom spacers 108 can be formed first byconformally depositing a layer of dielectric material, followed byetching a hole in the layer and forming the semiconductor fin throughthe hole.

Block 706 forms the gate stack on the sides of the semiconductor fin.The gate stack can include, for example, a gate dielectric layer, a gateconductor layer, and a gap layer. These layers can be formed byconformal deposition processes. Block 708 then forms an interlayerdielectric 114 around the semiconductor fin and the gate stack.

Block 710 etches back the semiconductor fin to form the channel fin 116.Block 712 etches back the layers of the gate stack below the height ofthe channel fin 116 to form the gate dielectric 109, gate conductor 112,and cap layer 110. These etches can be performed with respectiveselective anisotropic etches. Top spacers 118 can then be formed on theexposed sidewalls of the interlayer dielectric 114 using a conformaldeposition process, followed by a selective anisotropic etch to removematerial from the horizontal surfaces.

Block 716 forms a sacrificial layer 202 on the channel fin 116, forexample by epitaxial growth from the exposed top surface of the channelfin 116. The sacrificial layer 202 is formed from a material that has acrystal structure that is compatible with the crystal structure of thechannel fin 116, but that is selectively etchable with respect to thematerial of the channel fin 116. A fin cap 204 is then formed over thesacrificial layer 202, for example with a dielectric material that isdeposited using any appropriate deposition process, and then polisheddown to the top height of interlayer dielectric 114 using CMP.

Block 720 etches an opening in the fin cap 204, for example using an OPLmask 302 and a selective anisotropic etch. This leaves behind therestraint structures 304, with a portion of the sacrificial layer 202exposed. Block 722 etches away the sacrificial layer 202 using aselective isotropic etch that exposes the top surface of the channel fin116 and undercuts the restraint structures 304, creating an opening 402.

Block 724 epitaxially grows the top source/drain structure 502 from thechannel fin 116, within the opening 402. The growth of the topsource/drain structure 502 is laterally constrained by the presence ofthe restraint structures 304. Block 726 then forms a second interlayerdielectric 602 over the first interlayer dielectric 114 and block 728forms conductive through the interlayer dielectric 114 and 602 to formelectrical contacts to the bottom source/drain 104, the gate conductor112, and the top source/drain 502.

Having described preferred embodiments of a VTFET with cell heightconstraints (which are intended to be illustrative and not limiting), itis noted that modifications and variations can be made by personsskilled in the art in light of the above teachings. It is therefore tobe understood that changes may be made in the particular embodimentsdisclosed which are within the scope of the invention as outlined by theappended claims. Having thus described aspects of the invention, withthe details and particularity required by the patent laws, what isclaimed and desired protected by Letters Patent is set forth in theappended claims.

What is claimed is:
 1. A semiconductor device, comprising: a channel finhaving a top surface; a top semiconductor structure, in contact with theentire top surface of the channel fin and having a top portion and abottom portion, with the top portion of the top semiconductor structurebeing narrower than the bottom portion; a top spacer that extends abovethe top surface of the channel fin; and a restraint structure formedover the bottom portion of the semiconductor structure, in contact withthe top spacer.
 2. The semiconductor device of claim 1, wherein therestraint structure is formed from a dielectric material that is indirect contact with the top semiconductor structure.
 3. Thesemiconductor device of claim 1, further comprising a gate stack onsidewalls of the channel fin and a bottom source/drain structure underthe channel fin, wherein the top semiconductor structure is a topsource/drain structure.
 4. The semiconductor device of claim 3, furthercomprising a first conductive contact that makes electrical contact withthe gate stack, a second conductive contact that makes electricalcontact with the bottom source/drain structure, and a third conductivecontact that makes electrical contact with the top source/drainstructure.
 5. The semiconductor device of claim 4, wherein the firstconductive contact makes direct contact with the restraint structure. 6.The semiconductor device of claim 4, wherein the second conductivecontact makes direct contact with the restraint structure.
 7. Thesemiconductor device of claim 1, wherein the top semiconductor structurehas a stepped profile, including a horizontal top surface of the bottomportion.
 8. The semiconductor device of claim 1, wherein the topsemiconductor structure is a single epitaxially grown structure.
 9. Asemiconductor device, comprising: a channel fin having a top surface; atop semiconductor structure, formed from a single epitaxially grownstructure, in contact with the entire top surface of the channel fin andhaving a top portion and a bottom portion, with the top portion of thetop semiconductor structure being narrower than the bottom portion, andwith the top semiconductor structure having a stepped profile thatincludes a horizontal top surface of the bottom portion; and a restraintstructure, formed over the bottom portion of the semiconductorstructure.
 10. The semiconductor device of claim 9, wherein therestraint structure is formed from a dielectric material that is indirect contact with the top semiconductor structure.
 11. Thesemiconductor device of claim 9, further comprising a top spacer thatextends above the top surface of the channel fin, wherein the restraintstructure is in contact with the top spacer.
 12. The semiconductordevice of claim 9, further comprising a gate stack on sidewalls of thechannel fin and a bottom source/drain structure under the channel fin,wherein the top semiconductor structure is a top source/drain structure.13. The semiconductor device of claim 12, further comprising a firstconductive contact that makes electrical contact with the gate stack, asecond conductive contact that makes electrical contact with the bottomsource/drain structure, and a third conductive contact that makeselectrical contact with the top source/drain structure.
 14. Thesemiconductor device of claim 13, wherein the first conductive contactmakes direct contact with the restraint structure.
 15. The semiconductordevice of claim 13, wherein the second conductive contact makes directcontact with the restraint structure.
 16. A semiconductor device,comprising: a bottom source/drain structure; a channel fin on the bottomsource/drain structure, having a top surface; a gate stack on sidewallsof the channel fin; a top semiconductor structure, formed from a singleepitaxially grown structure, in contact with the entire top surface ofthe channel fin and having a top portion and a bottom portion, with thetop portion of the top semiconductor structure being narrower than thebottom portion, and with the top semiconductor structure having astepped profile that includes a horizontal top surface of the bottomportion; a restraint structure, formed over the bottom portion of thesemiconductor structure; a first conductive contact that makeselectrical contact with the gate stack; and a second conductive contactthat makes electrical contact with the bottom source/drain structure,wherein at least one of the first conductive contact and the secondconductive contact makes direct contact with the restraint structure.17. The semiconductor device of claim 16, wherein the restraintstructure is formed from a dielectric material that is in direct contactwith the top semiconductor structure.
 18. The semiconductor device ofclaim 16, further comprising a top spacer that extends above the topsurface of the channel fin, wherein the restraint structure is incontact with the top spacer.
 19. The semiconductor device of claim 16,wherein the top semiconductor structure is a top source/drain structure.